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| LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL76A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 123 1.3 14.0 0.85 * * * * 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING FEATURES * Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages. 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector - Base Voltage(IE=0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25C Junction Temperature Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 350V 160V 10V 60A 12A 85W 150C -55 to +150C Prelim. 2/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL76A Test Conditions Min. 160 350 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 100mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 340V TC = 125C VCE = 150V VEB = 9V TC = 125C IC = 1A VCE = 1V VCE = 1V VCE = 5V VCE = 5V IB = 0.1A IB = 2A IB = 4A IB = 1A IB = 2A VCE = 4V f = 1MHz V 10 100 100 10 100 A A A 35 15 30 15 90 60 90 70 0.1 1.1 0.7 1.2 1.5 21 157 V V -- hFE* DC Current Gain IC = 10A IC = 1A IC = 20A IC = 1A VCE(sat)* Collector - Emitter Saturation Voltage IC = 20A IC = 20A IC = 10A IC = 20A IC = 0.2A VCB = 10V VBE(sat)* Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300s , < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97 |
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